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TrenchStop(R) Series
IKW75N60T q
Low Loss DuoPack : IGBT in TrenchStop(R) and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
* * * * * * * * * * * *
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
E
PG-TO-247-3
Applications: * Frequency Converters * Uninterrupted Power Supply Type IKW75N60T VCE 600V IC 75A VCE(sat),Tj=25C 1.5V Tj,max 175C Marking K75T60 Package PG-TO-247-3
Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time
3)
Symbol VCE IC
Value 600 80
2)
Unit V A
75 ICpuls IF 802) 75 IFpuls VGE tSC Ptot Tj Tstg 225 20 5 428 -40...+175 -55...+175 260 V s W C 225 225
VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1) 2)
J-STD-020 and JESD-022 Value limited by bondwire 3) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.6 Sep 08
TrenchStop(R) Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA VCE(sat) V G E = 15 V, I C =75A T j = 25C T j = 175 C Diode forward voltage VF VGE=0V, IF=75A T j = 25C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =1.2mA,V C E =V G E V C E = 60 0 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C 5 s V C C = 400 V, T j 150C Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =75A V G E =15V IGES gfs RGint V C E = 0 V , V G E =20V V C E =20V, I C =75A 4.1 600 Symbol Conditions RthJA RthJCD RthJC Symbol Conditions
IKW75N60T q
Max. Value 0.35 0.6 40 Unit K/W
Value min. Typ. 1.5 1.9 1.65 1.6 4.9 max. 2.0 2.0 5.7
Unit
V
A 41 40 1000 100 nA S
4620 288 137 470 13 690
-
pF
nC nH A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.6 Sep 08
Power Semiconductors
TrenchStop(R) Series
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 25C , V R = 40 0 V , I F =75A, d i F /d t= 1460 A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =75A, V G E = 0 /1 5 V, R G =5 , L 1 ) =1 00nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. Symbol Conditions
IKW75N60T q
Value min. typ. 33 36 330 35 2.0 2.5 4.5 121 2.4 38.5 921 max. ns C A A/s mJ Unit
ns
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 175 C V R = 40 0 V , I F =75A, d i F /d t= 1460 A/s 182 5.8 56.2 1013 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 175 C , V C C = 40 0 V, I C =75A, V G E = 0 /1 5 V, RG= 5 L 1 ) =1 00nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 32 37 363 38 2.9 2.9 5.8 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.6 Sep 08
Power Semiconductors
TrenchStop(R) Series
IKW75N60T q
tp=1s 10s
200A
100A
IC, COLLECTOR CURRENT
150A T C =80C 100A T C =110C
IC, COLLECTOR CURRENT
50s 10A
50A
Ic
Ic
1ms DC 10ms
1A
0A 10H z
100H z
1kH z
10kH z
100kH z
1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 5)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V)
400W 350W 300W 250W 200W 150W 100W 50W 0W 25C 50C 75C 100C 125C 150C
120A
IC, COLLECTOR CURRENT
POWER DISSIPATION
90A
60A
Ptot,
30A
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
120A
V G E =20V 15V
120A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
V GE =20V 15V
90A
13V 11V 9V 7V
90A
13V 11V 9V 7V
60A
60A
30A
30A
0A 0V 1V 2V 3V
0A 0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
2.5V
80A
IC =150A
IC, COLLECTOR CURRENT
2.0V IC =75A
60A
1.5V
40A T J = 1 7 5 C 20A 2 5 C
1.0V
IC =37.5A
0.5V
0A
0.0V
0V
2V
4V
6V
8V
0C
50C
100C
150C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
t d(off)
t, SWITCHING TIMES
100ns tf
t, SWITCHING TIMES
t d(off)
100ns tf tr t d(on)
t d(on)
tr 10ns 0A 40A 80A 120A
10ns
5 10 15
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)
7V
t d(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6V m ax. 5V 4V 3V 2V 1V 0V -50C m in. typ.
t, SWITCHING TIMES
100ns
tr
tf
t d(on) 25C 50C 75C 100C 125C 150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=5, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.2mA)
Power Semiconductors
6
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
*) Eon and Ets include losses due to diode recovery
Ets*
*) E on an d E ts in c lud e lo s se s du e to d io d e re co v ery 8.0 m J E ts *
E, SWITCHING ENERGY LOSSES
12.0mJ
E, SWITCHING ENERGY LOSSES
Eon* 8.0mJ
6.0 m J
4.0 m J E on * 2.0 m J E off 0.0 m J
Eoff 4.0mJ
0.0mJ 0A 20A 40A 60A 80A 100A 120A 140A
0
5
10
15
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 5, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 75A, Dynamic test circuit in Figure E)
*) Eon and Ets include losses due to diode recovery 5.0mJ
*) E on and E ts include losses
Ets*
due to diode recovery
E, SWITCHING ENERGY LOSSES
4.0mJ
E, SWITCHING ENERGY LOSSES
8m J
6m J E ts * 4m J
E on *
3.0mJ
Eoff
2.0mJ Eon* 1.0mJ
E off 2m J
0.0mJ 25C
50C
75C
100C 125C 150C
0m J 300V
350V
400V
450V
500V
550V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 75A, RG = 5, Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
VGE, GATE-EMITTER VOLTAGE
C iss
15V
120V 10V 480V
c, CAPACITANCE
1nF
C oss
5V
100pF
C rss
0V 0nC
100nC
200nC
300nC
400nC
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=75 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
12s
IC(sc), short circuit COLLECTOR CURRENT
SHORT CIRCUIT WITHSTAND TIME
1000
10s 8s 6s 4s 2s 0s 10V
750
500
250
0 12 13 14 15 16 17 18 19 20
tSC,
11V
12V
13V
14V
VGE, GATE-EMITTER VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C)
VGE, GATE- EMITTER VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25C, TJmax<150C)
Power Semiconductors
8
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
D=0.5
D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
-1
0.2 0.1 0.05
R,(K/W) 0.1968 0.0733 0.0509 0.02 0.0290
ZthJC, TRANSIENT THERMAL RESISTANCE
0.2 10 K/W
-1
0.1 0.05 0.02 0.01
, (s)
0.115504 0.009340 0.000823 0.000119
R2
10 K/W
-2
0.01 R 1
R,(K/W) 0.1846 0.1681 0.1261 0.0818 0.04
R1
, (s) 0.110373 0.015543 0.001239 0.000120 0.000008
R2
10 K/W
-2
C1= 1/R1
C2= 2/R2
C 1 = 1 /R 1 C 2 = 2 /R 2
single pulse 10 K/W 1s
-3
single pulse 100ns 1s 10s 100s 1ms 10ms100ms
10s 100s
1ms
10ms 100ms
tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Qrr, REVERSE RECOVERY CHARGE
200ns
trr, REVERSE RECOVERY TIME
TJ=175C
5C
T J=175C
4C
150ns
3C
100ns
TJ=25C
50ns
2C
T J=25C
1C
0ns 1000A/s
1500A/s
0C 1000A/s
1500A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
T J=175C T J=25C
T J =175C
60A 50A 40A
REVERSE RECOVERY CURRENT
-1200A/s
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-1000A/s
-800A/s
T J =25C
30A 20A 10A 0A
-600A/s
-400A/s
Irr,
-200A/s
1000A/s
1500A/s
0A/s 1000A/s
1500A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=75A, Dynamic test circuit in Figure E)
200A
T J =25C
2.0V
I F =150A
150A
VF, FORWARD VOLTAGE
175C
IF, FORWARD CURRENT
1.5V
75A
100A
1.0V
37.5A
50A
0.5V
0A
0V
1V
2V
0.0V 0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
10
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
11
Rev. 2.6 Sep 08
TrenchStop(R) Series
i,v diF /dt
IKW75N60T q
tr r =tS +tF Qr r =QS +QF tr r
IF
tS QS
tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
12
Rev. 2.6 Sep 08
TrenchStop(R) Series
IKW75N60T q
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.6 Sep 08

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